Course Description
The course will present the necessary tools and techniques required in the fabrication of compound semiconductor devices. Because of the wide disparity between III-V and silicon semiconductor devices, the course is orthogonal to the silicon device fabrication course <a href=/grad/courses/ENSC851.html>ENSC 851-3</a>. Topics to be cover include: basics of HBTs and HEMTs, elements of III-V compound semiconductor materials science, III-V substrate preparation and properties, doping of III-V compounds and amphoteric behavior, epitaxial growth by MBE, MOCVD, characterization of epitaxial layers, lithography: optical and electron beam, Schottky and Ohmic contact formation, plasma processing techniques such as RIE and PECVD.
Prerequisites
Students wishing to take this course must have the permission of the instructor.