Modeling of Semiconductor Devices and Processes
S. Opalski and M. Syrzycki, The Steady-State Distribution of Signal Charge in Charge-Coupled Devices, Electron Technology, Vol.12, No.2, pp.3-14, 1979. M. Syrzycki, Calculation of the Self-Induced Field Profile Produced by Steady-State Distribution of Signal Carriers in Charge-Coupled Device, Electron Technology, Vol.12, No.3, pp.47-63, 1979. M. Syrzycki and W. Maly, Layout Related Modeling of MOS Transistor, Proc. of 12th European Solid State Device Research Conference, ESSDERC 82, Munich, pp.222-223, 1982. M. Syrzycki, W. Maly, and J. Gos, Models of NMOS Transistors for Circuit Simulation, (in Polish), ITE Journal, No.2/3, pp.23-49, 1984. W. Maly and M. Syrzycki, Layout Related Deformations of Meander-Type MOS Transistor I-V Characteristics, IEE Proceedings, Vol.132, Pt. I, No. 1, pp.13-16, February 1985. M. Syrzycki, Modeling of Spot Defects in MOS Transistors, SRC-CMU Research Report No.CMUCAD-87-22, Carnegie Mellon University, June 1987. M. Syrzycki, Modelling of Spot Defects in MOS Transistors, 1987 International Test Conference ITC'87, Washington, D.C., pp.148-157, September 1987. M. Syrzycki, Modeling of Gate Oxide Shorts in MOS Transistors, SRC-CMU Research Report No.CMUCAD-88-22, Carnegie Mellon University, April 1988. M. Syrzycki, Modeling of Gate Oxide Shorts in MOS Transistors, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol.8, No.3, pp.193-202, March 1989. P. Scheltens, A. Rawicz, M. Syrzycki, Modeling and Simulation of Human Retinal Vision Processing, Canadian Conference on Electrical and Computer Engineering CCECE'90, Ottawa, Ontario, pp. 29.1.1-29.1.4, September 4-6, 1990. M. Syrzycki, Modeling and Characterization of Multiterminal MOS Transistors, 1990 Canadian Conference on Very Large Scale Integration CCVLSI'90, Ottawa, Ontario, pp. 5.5.1-5.5.8, October 21-23, 1990. H. Ma, M. Syrzycki, E. Czyzewska, ANSYS® Finite Element Analysis of Thin Film Microsensor Design, 6th International ANSYS Conference & Exhibition, Pittsburgh, PA, May 2-6, 1994. R. Sobot, S. Stapleton, M. Syrzycki, Behavioral Modeling of Continuous Time Delta-Sigma Modulators, 2003 IEEE International Workshop on Behavioral Modeling and Simulation BMAS 2003, pp.88-91, San Jose, California, October 7-8, 2003. H.Lin, J.B.Kuo, R.Sobot, M. Syrzycki, Investigation of Substrate Noise Isolation Solutions in Deep Submicron (DSM) CMOS Technology, 2007 20th IEEE Annual Canadian Conference on Electrical and Computer Engineering CCECE'07, VAncouver, BC, 22-26 Apr. 2007.
For author's copy of the publication, send an e-mail to email@example.com.